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2SC4829
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
* High frequency characteristics fT = 1100 MHz Typ * High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ * Suitable for wide band video amplifier
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
2SC4829
Ordering Information
hFE 2SC4829B 2SC4829C 60 to 120 100 to 200
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 100 100 3 0.2 0.5 0.9 150 -55 to +150 Unit V V V A A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio 2SC4829B 2SC4829C Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE hFE VBE VCE(sat) fT Cob Min 100 100 -- -- 60 100 -- -- 800 -- Typ -- -- -- -- -- -- -- -- 1100 4.2 Max -- -- 10 1.0 120 200 1.0 1.0 -- 6.0 V V MHz pF VCE = 10 V, IC = 10 mA I C = 100 mA, IB = 10 mA VCE = 10 V, IE = 100 mA VCB = 30 V, IE = 0, f = 1 MHz Unit V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = VEB = 3 V, IC = 0 VCB = 80 V, IE = 0 VCE = 10 V, IC = 10 mA
2
2SC4829
Maximum Collector Dissipation Curve 1.6 Collector Power Dissipation Pc (W) 50 I C (mA) 400 A 350 A 300 A 250 A 200 A 20 150 A 100 A 50 A IB = 0 4 6 8 10 2 Collector to Emitter Voltage V CE (V) Typical Output Characteristics
40
1.2
0.8
0.4
Collector Current 50 100 150 Ambient Temperature Ta (C) 200
30
10
0
0
DC Current Transfer Ratio vs. Collector Current VCE = 10 V Pulse test Collector to Emitter Saturation Voltage VCE(sat) (V) 1000 DC Current Transfer Ratio hFE 500 1.0 0.5
Collector to Emitter Saturation Voltage vs. Collector Current I C / I B = 10 Pulse test
200 100 50 Ta = 75C 25 C -25C
0.2 Ta = 75C 0.1 25 C
0.05 -25C
20 10 1 10 100 1000 Collector Current I C (mA)
0.02 0.01 1 10 100 1000 Collector Current I C (mA)
3
2SC4829
Collector Current vs. Base to Emitter Voltage f T (MHz) 1000 I C (mA) VCE = 10 V Pulse test 5000 VCE = 10 V Pulse test 2000 1000 500 Gain Bandwidth Product vs. Collector Current
Ta = 75C 25C 10 -25C
Gain Bandwidth Product
100
Collector Current
200 100 50 1 10 100 1000 Collector Current I C (mA)
1 0
0.2 0.4 0.6 Base to Emitter Voltage
0.8 V BE (V)
1.0
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 50 20 10 5 IE = 0 f = 1 MHz
2 1 2 5 10 20 50 100 Collector to Base Voltage V CB (V)
4
Unit: mm
4.8 0.3
3.8 0.3
0.65 0.1 0.75 Max 0.5 0.1 0.7 0.60 Max
2.3 Max
10.1 Min
8.0 0.5
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod -- Conforms 0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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